| 摘要 |
A cellular transistor structure is disclosed which incorporates a polysilicon gate mesh. In one embodiment, the silicon under the polysilicon is of an N-type while the exposed area not covered by the polysilicon is doped with a P dopant to form P-type source and drain regions. Metal strips are used to contact the rows of source and drain cells. By forming the openings in the polysilicon mesh to be in a diamond shape (i.e., having a long diagonal and a short diagonal), the source and drain metal strips, arranged in the direction of the short diagonals, can be made wider and shorter, thus reducing the on-resistance of the transistor without increasing the area of the transistor. |
