| 摘要 |
<p>A parallel plate diode comprises metal electrodes and a semiconductor material layer contacting with them. Two thin plate electrodes made of a metal are disposed in parallel, and there is a layer of thin plate semiconductor material between them. The concentration of the carriers in the semiconductor material layer is 20% or less than that of the electrons in the metal. One of the metal electrodes is made so as to have a plurality of recesses from its surface into interior in the side of the semiconductor layer. The mean diameter of these recesses is less than 4 νm. These recesses are well-like cavities or an array of projections in which convex portions and concave portions are staggered each other. The cross section shape of the well-like cavity is circular, square or rectangle. This diode may output a current and a voltage in a closed loop circuit without being applied a bias voltage or a bias current.</p> |
