| 摘要 |
A method and apparatus for monitoring and controlling reactive sputter deposition, particularly useful for depositing insulating compounds (e.g., metal-oxides, metal-nitrides, etc.). For a given nominal cathode power level, target material, and source gases, the power supplied to the cathode (target) is controlled to stabilize the cathode (target) voltage at a specified value or within a specified range corresponding to a partial pressure or relative flow rate value or range of the reactive gas. Such an operating point or range, characterized by specified voltage value or range and corresponding reactive gas relative-flow/partial-pressure value or range, may be determined empirically based on measuring the cathode voltage as a function of reactive gas relative-flow/partial-pressure for the given nominal power. This relationship is typically a hysteresis curve, and preferably the operation point is selected at or near the hysteresis transition edge to provide high rate deposition of high quality films, including insulating or dielectric films using a metallic target.
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