| 摘要 |
The present invention provides a method for forming a dielectric film, e.g., a barium-strontium-titanate film, preferably having a thickness of less than about 600 ANGSTROM . According to the present invention, the dielectric film is preferably formed using a chemical vapor deposition process in which an interfacial layer and a bulk layer are formed. The interfacial layer has an atomic percent of titanium less than or equal to the atomic percent of titanium in the bulk layer. Such films are particularly advantageous for use in memory devices, such as dynamic random access memory (DRAM) devices.
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