METHOD FOR PRODUCING A DRAM CELL ARRANGEMENT

摘要

The invention relates to a DRAM cell arrangement. A cavity (V) for a capacitor of a storage cell pertaining to the DRAM cell arrangement is produced in a substrate (1). An insulation (I) and a storage node (SP) of the capacitor are generated in the cavity (V). A spacer consisting of silicon is produced over the storage node (SP). A first component of the spacer is doped by means of inclined implantation. The spacer is structured by using the different doping of the first component of the spacer. The storage node (SP) and the insulation (I) are changed by means of the structured spacer as a mask in such a way that the storage node (SP) is only directly adjacent to the substrate in a defined section of a flank pertaining to the cavity (V) and is otherwise separated from the substrate (1) by means of the insulation (I).