| 摘要 |
<p>A nonvolatile semiconductor memory comprises ferroelectric capacitors, each connected with the gate electrode Of a MOSFET. The memory comprises a thin silicon (10) formed in stripes on the insulating substrate and including an n+-layer (13), a p-layer (14) and an n+-layer (15); a hole (17) reaching the lower n+-layer (13) through the thin silicon (10); a gate electrode (21) formed on a gate insulation film (19) in the hole (17); and a ferroelectric capacitor formed on the thin silicon (10) and having a lower electrode (25) connected with the gate electrode (21).</p> |
