发明名称 |
DRAM with impurity region of second conductivity |
摘要 |
A semiconductor substrate (1) of a second conductivity has an impurity region of first conductivity on its main surface. On the latter is deposited an insulating layer with an aperture region, reaching up to the impurity region. On the latter and in contact with it is a first electrode layer, extending to the insulating layer surface. The contacting is carried out via a first region (11a) while a second region of the electrode layer extends vertically upwards w.r.t. the substrate main surface and along the first region outer edge. The electrode layer surface is coated by a dielectric layer (12), covered by a second electrode layer (13).
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申请公布号 |
DE4143476(C2) |
申请公布日期 |
2001.03.08 |
申请号 |
DE19914143476 |
申请日期 |
1991.01.25 |
申请人 |
MITSUBISHI DENKI K.K., TOKIO/TOKYO |
发明人 |
AJIKA, NATSUO;ARIMA, HIDEAKI;HACHISUKA, ATSUSHI |
分类号 |
H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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