SILICON WAFER AND METHOD FOR MANUFACTURE THEREOF, AND METHOD FOR EVALUATION OF SILICON WAFER

摘要

A method for producing a silicon ingot through pulling up a silicon single crystal according to the Czochralsky method, wherein the silicon single crystal is pulled up while being doped with nitrogen in such a condition as to form a part having a nitrogen content of 5 x 10<13> atoms/cm<3> to 1 x 10<15> atoms/cm<3>. A silicon wafer having a nitrogen content of 5 x 10<13> atoms/cm<3> to 1 x 10<15> atoms/cm<3> which is suitable for being treated with heat in a non-oxydizing atmosphere is manufactured of an ingot produced by using the method. The method can be used for producing a silicon wafer being doped with nitrogen and having satisfactory characteristics for use in a semiconductor device.