发明名称 |
Verfahren zur Plasmaspritz-Abscheidung im unteren Radiofrequenzbereich |
摘要 |
<p>A low frequency RF plasma spray deposition method is provided, which is especially effective in reducing losses and improving particle heating. In one aspect of the invention, an RF plasma gun is operated in the frequency range below 1 MHz and an argon-helium mixture to which a third component, such as hydrogen, can also be admixed, is substituted for the standard argon-hydrogen mixture used at frequencies above 2 MHz. In another aspect of the invention, a RF plasma gun is operated in the frequency range of 400-500 kHz and specific start up and operating procedures and conditions are set forth for successful deposition of titanium and refractory metal alloys.</p> |
申请公布号 |
DE4114474(C2) |
申请公布日期 |
2001.03.08 |
申请号 |
DE19914114474 |
申请日期 |
1991.05.03 |
申请人 |
GENERAL ELECTRIC CO., SCHENECTADY |
发明人 |
FRIND, GERHARD;SIEMERS, PAUL ALFRED;RUTKOWSKI, STEPHEN FRANCIS |
分类号 |
B05B7/22;C23C4/12;H05H1/44;(IPC1-7):H05H1/30;H01J37/32;B05B7/16 |
主分类号 |
B05B7/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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