发明名称 |
EPITAXIAL SILICON WAFER |
摘要 |
An epitaxial silicon wafer which comprises a silicon wafer produced by a method characterized as comprising pulling up a silicon single crystal under a condition wherein when an oxygen concentration is 7 x 10<17> atoms/cm<3> a nitrogen concentration is about 3 x 10<15> atoms/cm<3> or less, and when an oxygen concentration is 1.6 x 10<18> atoms/cm<3> a nitrogen concentration is about 3 x 10<14> atoms/cm<3> or less, and, an epitaxial film formed on the wafer. The epitaxial film, being formed on such a wafer, has crystal defects, which are observed as LPD of 120 nm or more on the epitaxial film, in a range of 20 pieces/200 mm wafer or less. The epitaxial silicon wafer contains nitrogen atoms doped therein and also has satisfactory characteristics as that for use in a semiconductor device.
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申请公布号 |
WO0116408(A1) |
申请公布日期 |
2001.03.08 |
申请号 |
WO2000JP04216 |
申请日期 |
2000.06.26 |
申请人 |
KOMATSU DENSHI KINZOKU KABUSHIKI KAISHA;KOMIYA, SATOSHI;YOSHINO, SHIRO;DANBATA, MASAYOSHI;HAYASHIDA, KOUICHIROU |
发明人 |
KOMIYA, SATOSHI;YOSHINO, SHIRO;DANBATA, MASAYOSHI;HAYASHIDA, KOUICHIROU |
分类号 |
H01L21/205;C30B15/00;C30B29/06;H01L21/322;(IPC1-7):C30B29/06 |
主分类号 |
H01L21/205 |
代理机构 |
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