SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and manufacturing method thereof are provided to increase an on-current of a thin film transistor by maximize the channel length of the thin film transistor. CONSTITUTION: A first gate electrode(45) for bulk transistor is located on a defined region of a substrate(41) having a first insulation layer(43). Insulation walls(47) are connected to both sidewalls of the first gate electrode(45). First source and drain(48,48a) are located in the substrate(41) and the first source and drain(48,48a) are on both sidewalls of the first gate electrode(45). A second insulation layer(49) is connected to the first gate electrode(45) and a semiconductor layer(51) is located on a defined region of the second insulation layer(49). A fourth insulation layer(59) is located between the semiconductor layer(51) and a second gate electrode(61). Second source and drain(57,57a) are located on both sidewalls of the second gate electrode(61). The upper and lower surfaces of the semiconductor layer(51) are used as channel regions.