| 发明名称 |
Method for improving a quality of dielectric layer and semiconductor device |
| 摘要 |
<p>There is provided a film quality improving method for an insulating film, which comprises the steps of forming a silicon oxide film (105) on a substrate (101), and applying heat treatment to the silicon oxide film (105) by exposing a surface of the silicon oxide film (105) to a steam-containing atmosphere after the silicon oxide film (105) is formed. <IMAGE></p> |
| 申请公布号 |
EP1081755(A2) |
申请公布日期 |
2001.03.07 |
| 申请号 |
EP20000115048 |
申请日期 |
2000.07.26 |
| 申请人 |
CANON SALES CO., INC.;SEMICONDUCTOR PROCESS LABORATORY CO., LTD. |
发明人 |
SUZUKI, SETSU;MAEDA, KAZUOU |
| 分类号 |
H01L21/3105;H01L21/316;(IPC1-7):H01L21/316 |
主分类号 |
H01L21/3105 |
| 代理机构 |
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