| 摘要 |
PURPOSE:To prevent the infliction of the adverse effect of photolithographic defect and mask matching deviation by a method wherein two or more mask layers are provided or only one mask is provided and the processes such as resist coating, mask-matching, exposing, developing, etching and the like, are conducted twice or more. CONSTITUTION:A first diffusion mask 2 is formed on an N-type wafer 1, and then a second diffusion mask 3 is formed thereon. The second diffusion mask is coated with a first resist 4, a first photolithographic mask 5 is set and an exposing treatment is conducted. A second resist 6 is coated again, a second photolithographic mask 7 is set for reformation of light-emitting part, and an exposing treatment is conducted. The second photolithographic mask 7 is made larger than the first photolithographic mask 5, and the error of pattern due to two mask matching is prevented. After exposure, the second resist 6 is formed by developing. When the second resist 6 is removed, the lower layer can be patternized as deep as to the first diffusion mask 2. |
