Process for the manufacturing of integrated circuits, particularly of intelligent power semiconductor devices

摘要

A process for the manufacturing of integrated ciruits comprises the steps of: forming an oxide layer (5,6) on at least one surface of two respective semiconductor material wafers (1,2); obtaining a single semiconductor material wafer with a first layer (3,9) and a second layer (2) of semiconductor material and a buried oxide layer (8) interposed therebetween starting from said two semiconductor material wafers (1,2) by direct bonding of the oxide layers (5,6) previously grown; submitting the single wafer to a controlled reduction of the thickness of the first layer (3,9) of semiconductor material; lapping a top surface of the first layer (3,9) of semiconductor material; selectively introducing dopant impurities into selected regions (12,13,14) of the first layer (3,9) of semiconductor material to form the desired integrated components; forming trenches (18) laterally delimiting respective portions of the first layer (3,9) of semiconductor material wherein integrated components are present which are to be electrically isolated from other integrated components; filling the trenches (18) with an insulating material (20).