| 摘要 |
PURPOSE: A manufacturing method of a semiconductor laser diode is provided to be simplified using LPE(Liquid Phase Epitaxy) growth feature, and to prevent the oxidation problem of Al by preventing the exposure of an AlGaAs layer after channel formation. CONSTITUTION: First, a mesa part and a double channel part are formed by etching predetermined portions of an n type GaAs substrate(11) with a photolithography process. Then, a first conductive type n-AlGaAs clad layer(12), an activation layer(13), a second conductive type p-AlGaAs clad layer(14), p-AlGaAs layer(15)/n-AlGaAs layer(16) as current shield layers, a p-GaAs layer(17) as a cap layer are sequentially formed using an LPE growth method. The p-AlGaAs layer(15)/n-AlGaAs layer(16) are disconnected by the mesa part so that all the current can be flown in the mess.
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