| 摘要 |
A method for forming a semiconductor device is provided to prevent generation of foreign materials on a surface of a bond pad by performing an indirect etch process using a photoresist. A wafer including a plurality of semiconductor dice having bond pads is prepared(S1). A photoresist is formed to cover the semiconductor dice and the bond pads(S2). The photoresist is removed from a region except for a region corresponding to the bond pads(S3). A first insulating layer is formed to cover the semiconductor dice and the photoresist(S4). The first insulating layer is polished and planarized to expose the photoresist to the outside(S5). The exposed photoresist is removed(S6). A re-wiring layer is formed on surfaces of the bond pads and the first insulating layer(S7). |
