| 摘要 |
A method for forming the copper interconnects is disclosed. The method includes, firstly, providing a semiconductor substrate is provided. Then, a first dielectric layer is formed. Sequentially, a second dielectric layer is formed and an anti-reflective layer is formed. Then, a hardmask layer is formed. Etching of the hardmask layer is carried out. The photoresist layer is removed and another photoresist is replaced. The anti-reflective layer, the second dielectric layer and the first dielectric layer are all etched. The hardmask layer, the anti-reflective layer and the second dielectric layer are all etched. The photoresist layer, the hardmask layer and the anti-reflective layer are all removed. A first barrier layer is conformably formed on the sidewalls and the exposed surfaces of the second dielectric layer and the first dielectric layer, and on the surface of the first copper layer. A seed layer is conformably formed on the barrier layer. The via opening is filled up and the line opening with a second copper layer. Finally, the second copper layer can be planarized until the second dielectric layer is exposed.
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