发明名称 |
Integrated circuits using high aspect ratio vias through a semiconductor wafer and method for forming same |
摘要 |
An integrated circuit and method for forming the same. The integrated circuit includes a semiconductor wafer with first and second surfaces. A functional circuit is formed on the first surface of the semiconductor wafer. Further, a metallization layer is formed outwardly from the first surface of the semiconductor wafer. The integrated circuit also includes at least one high aspect ratio via that extends through the layer of semiconductor material. This via provides a connection between a lead and the functional circuit.
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申请公布号 |
US6198168(B1) |
申请公布日期 |
2001.03.06 |
申请号 |
US19980009791 |
申请日期 |
1998.01.20 |
申请人 |
MICRON TECHNOLOGIES, INC. |
发明人 |
GEUSIC JOSEPH E.;AHN KIE Y.;FORBES LEONARD |
分类号 |
H01L23/48;(IPC1-7):H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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