发明名称 |
Cubic nitride semiconductor device and fabrication method of the same |
摘要 |
The object of the present invention is to form a cubic nitride semiconductor layer of excellent surface flatness and crystallization on a cubic III-V family compound semiconductor substrate, featuring a fabrication method that comprises the steps of forming a cubic semiconductor layer 2 containing aluminum, nitriding one surface of the semiconductor layer 2 by heating in an atmosphere of a nitrogen compound and then supplying a nitrogen compound and a compound containing III family elements to form a cubic nitride semiconductor layer 3 on the semiconductor layer 2.
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申请公布号 |
US6197441(B1) |
申请公布日期 |
2001.03.06 |
申请号 |
US19980124889 |
申请日期 |
1998.07.30 |
申请人 |
MATSUSHITA ELECTRONICS CORPORATION |
发明人 |
YURI MASAAKI;UEDA TETSUZO;BABA TAKAAKI |
分类号 |
H01L29/20;C30B25/02;H01L21/20;H01L21/203;H01L21/205;H01L33/32;(IPC1-7):H01L21/203 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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