Chemically preventing Cu dendrite formation and growth by double sided scrubbing

摘要

The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines after CMP by double sided scrubbing with a chemical agent. Embodiments include removing portions up to 60 Å of silicon oxide by double sided scrubbing with a solution containing ammonium fluoride, diammonium hydrogen citrate, triammonium citrate, and dionized water, with or without a surfactant.