| 摘要 |
PROBLEM TO BE SOLVED: To obtain a thin film magnetic impedance effect component with a large rate of change in impedance to change in an external magnetic field and superior sensitivity and resolution by forming a magnetically soft thin film in a magnetostatic field in a predetermined direction. SOLUTION: A magnetically soft thin film 12 is formed on a substrate 11 made of a non-magnetic material in a magnetostatic field H1 of a predetermined direction. In other words, the substrate 11 and magnets 30 for impressing the magnetostatic field H1 are placed on a substrate holding part 28 in the chamber 22 of a magnetron sputtering device 21. Then by impressing a high frequency on an electrode 24 from a high-frequency power source 29, magnetron discharge is generated by the interaction between an electric field and magnetic field, and a target 23 is sputtered to form a magnetically soft thin film 12 on the substrate 11. By forming the magnetically soft thin film 12 in a magnetostatic field in this way, it is possible to add uniaxial anisotropy to the magnetically soft thin film 12 to be a magnetic sensing part and to enlarge rate of change in impedance at the time when an external magnetic field is impressed.
|
