Fabrication method for bottom electrode of capacitor

摘要

A method of fabricating a bottom electrode for a capacitor is described in which a dielectric layer is formed on a substrate already comprising an isolation layer, an etching stop layer and a landing pad. Bit line structures and spacers are further formed on the dielectric layer. A node contact window opening is formed in the dielectric layer, exposing the landing pad, and a conformal first conductive layer is formed on the substrate. After a specially patterned mask layer is formed and the exposed first conductive layer is removed, an extended portion is formed connecting to the conductive layer to complete the fabrication of the columnar bottom electrode for a capacitor.