发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 An object of the invention is to provide a resistor element whose contact area is self-alignedly formed to reduce the contact area size and contact resistance variation and which can be formed finely and with high precision at low cost. A thin metal film is deposited on a substrate surface covered with an insulation film on which wirings are formed. The thin metal film is anisotropically etched to leave a desired portion such that the desired portion straddles between wirings, self-alignedly connecting the thin metal film to be a resistor and the wirings.
申请公布号 US2008217740(A1) 申请公布日期 2008.09.11
申请号 US20080017438 申请日期 2008.01.22
申请人 SHIRAMIZU NOBUHIRO;SHIMAMOTO HIROMI 发明人 SHIRAMIZU NOBUHIRO;SHIMAMOTO HIROMI
分类号 H01L27/06;H01L21/02 主分类号 H01L27/06
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