发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 An upper electrode film includes a first conductive oxidation layer made of an oxide expressed by a chemical formula M<SUB>1</SUB>O<SUB>x2</SUB>, a second conductive oxidation layer made of an oxide expressed by a chemical formula M<SUB>2</SUB>O<SUB>y2 </SUB>and a third conductive oxidation layer. Here, the second conductive oxidation layer is formed to have a degree of oxidation higher than the first conductive oxidation layer and the third conductive oxidation layer, and among the composition parameters x<SUB>1</SUB>, x<SUB>2</SUB>, y<SUB>1</SUB>, y<SUB>2</SUB>, z<SUB>1 </SUB>and z<SUB>2</SUB>, there are the following relations, <?in-line-formulae description="In-line Formulae" end="lead"?>y<SUB>2</SUB>/y<SUB>1</SUB>>x<SUB>2</SUB>/x<SUB>1</SUB>, y<SUB>2</SUB>/y<SUB>1</SUB>>z<SUB>2</SUB>/z<SUB>1</SUB>, and z<SUB>2</SUB>/z<SUB>1</SUB>>=x<SUB>2</SUB>/x<SUB>1</SUB>.<?in-line-formulae description="In-line Formulae" end="tail"?>
申请公布号 US2008217738(A1) 申请公布日期 2008.09.11
申请号 US20080040393 申请日期 2008.02.29
申请人 FUJITSU LIMITED 发明人 WANG WENSHENG
分类号 H01L27/06;H01L21/20 主分类号 H01L27/06
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