| 摘要 |
A gate electrode is formed in an element region of a semiconductor substrate. By ion implantation using the gate electrode as the mask, a low density doping (LDD) region is formed. By ion implantation after forming a side wall insulating film on the side wall of the gate electrode, source and drain regions are formed. Afterwards, by varying the thickness of the side wall insulating film of the side wall of the gate electrode, that is, by reducing the thickness of the side wall insulating film, a sufficient silicide region is formed on the source and drain regions. A silicide layer is formed on the gate electrode and source and drain regions by thermal reaction between a refractory metal and silicon in the gate electrode or in the semi-conductor substrate.
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