| 发明名称 |
Bonded wafer, process for producing same and substrate |
| 摘要 |
A bonded wafer in which silicon wafers and an amorphous heat fusion bonding polyimide are used, a process for producing the same, and a substrate which is prepared by variously processing the bonded wafer.
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| 申请公布号 |
US6198159(B1) |
申请公布日期 |
2001.03.06 |
| 申请号 |
US19980042697 |
申请日期 |
1998.03.17 |
| 申请人 |
UBE INDUSTRIES, LTD. |
发明人 |
HOSOMA TOSHINORI;YOSIOKA KAZUHIKO;KATSUKI SHOUZOU |
| 分类号 |
B32B7/12;B32B15/08;B32B27/34;B81C1/00;H01L21/02;H01L21/20;H01L21/762;(IPC1-7):H01L23/58 |
主分类号 |
B32B7/12 |
| 代理机构 |
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