| 摘要 |
PROBLEM TO BE SOLVED: To obtain satisfactory Schottky characteristics. SOLUTION: Each layer of three-layer structure comprises a semiconductor (a collector layer 13)/a metal (a base layer 14)/the semiconductor (an emitter layer 15) is composed of a nitride. Thus, both the semiconductor layers and the metal layer are made to woke a constituent element (N) the same. Since the nitride is formed at a stoichiometric ratio of 1:1 of Nb:N in the NbN base layer 14, the formed metal nitride and nitride semiconductors display the same stoichiometric ratio. Thus, the base layer 14 and the emitter layer 15 can be formed (an interface bond of 1:1) continuously in a space, and a satisfactory Schottky junction is obtained. Accordingly, an MBT(a metal-based type transistor) having superior electrical characteristics is acquired.
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