| 摘要 |
PROBLEM TO BE SOLVED: To prevent the reduction of yield due to failure of wiring connection by heating a semiconductor device in a high-pressure gas atmosphere after a wiring step for all wiring layers and connection holes in a semiconductor device is completed. SOLUTION: First, a wafer which is finished as a semi-product through an LSI manufacturing step is tested. Next, a wafer producing a defective chip due to failure of wiring connection is annealed at a high pressure while being heated in a high-pressure gas, so that it is repaired. The causes of failure of wiring connection can be judged from the result of wafer test as follows: 1) a consumption current during operation is much smaller than the specified value; 2) no reaction with an input voltage is found in a specific signal wire; 3) no output voltage is produced in a specific output signal wire. Therefore, the defective wafer is annealed at 450 deg.C for 15 minutes and at 120MPa in an argon gas.
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