| 摘要 |
PROBLEM TO BE SOLVED: To reduce the thickness of a resin sealed semiconductor device by connecting first and second electrodes to inner leads through bump conductors and a third electrode to an inner lead through a wire conductor. SOLUTION: A lead frame is faced to the surface of a semiconductor chip 1, on which a base electrode 2 and an emitter electrode 3 are provided, and the electrodes 2 and 3 are respectively connected to an inner lead 5A for base and and another inner lead 6A for emitter through Au bumps 8. The connection between a collector electrode 4, provided on the rear surface of the chip 1 and an inner lead 7A for collector, is made through a bonding wire 9. Since no short circuit occurs, even if the bonding wire 9 comes into contact with the edge of the chip 1, the looped height of the bonding wire 9 can be lowered to 70-80 microns. Since the looped height of the wire 9 is lowered, the length of the wire 9 can be reduced, and accordingly, the lateral size of a resin sealed semiconductor device can also be reduced. |
