发明名称 ANALYZING METHOD OF MINUTE REGION BY SECONDARY ION MASS ANALYZING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a secondary ion mass analyzing method capable of analyzing a very small amt. of a component in a minute region. SOLUTION: In a focused ion beam/oxygen ion beam alternate irradiation method of one technique of a secondary ion mass analyzing method, a sputtering speed is made slow by lowering the irradiation current of focused ion beam to enable the analysis of a very small amt. of a component in a minute region, the sputtering due to oxygen ions is suppressed by using oxygen ion beam of low energy, and the analyzing vol. due to the focused ion beam is increased to enable the analysis of a very small amt. of the component in the minute region with further high sensitivity.</p>
申请公布号 JP2001059826(A) 申请公布日期 2001.03.06
申请号 JP19990238532 申请日期 1999.08.25
申请人 ASAHI CHEM IND CO LTD 发明人 KIKUMA ATSUSHI
分类号 H01J37/252;G01N23/225;(IPC1-7):G01N23/225 主分类号 H01J37/252
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