| 摘要 |
A manufacturing method for a semiconductor device in which, when a silicon oxide film on a semiconductor substrate is wet-etched for trench device isolation, no divot is formed at a device isolation end due to etching of a first insulating film of a trench isolation region to improve yield as well as reliability and productivity. A second insulating film (7 of FIG. 2) is formed and etched to leave a second insulating film 7a selectively in the rim of a isolation region where a divot is likely to be formed to prevent the divot from being formed by wet etching.
|
