发明名称 Mask for area forming selective grating and selective area growth and method for fabricating semiconductor device by utilizing the same
摘要 A mask for forming a selective grating and selective area growth and a method for fabricating an electro-absorption modulated laser device by utilizing the mask are disclosed. The mask for forming the selective grating and the selective area growth comprises a + shaped island type pattern and a stripe type pattern to allow, during the formation of the selective grating, the selective grating to be formed only in a laser diode region, and to allow, during the selective area epitaxial growth, the selective area growth to be carried out only with the stripe pattern in the diode laser region after the island pattern being removed.
申请公布号 US6197608(B1) 申请公布日期 2001.03.06
申请号 US19990324852 申请日期 1999.06.03
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HA HONG-TCHOON
分类号 G03F7/00;H01S5/026;H01S5/20;(IPC1-7):H01L21/302;H01L21/20 主分类号 G03F7/00
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