发明名称 Semiconductor device and manufacturing method thereof including a probe test step and a burn-in test step
摘要 Dispersion of a load may be kept within a predetermined allowance even when a plurality of probes in a large area are pressed in batch by pressing the probes provided in a membrane against a wafer by applying a pressure load to a plurality of places on a plane of the pressure members on the side opposite the wafer in a probe test step, burn-in test step which represent typical semiconductor device manufacturing steps. It is then possible to provide semiconductor devices and a manufacturing method thereof which enhance the reliability and productivity of the semiconductor devices by probing a large number of integrated circuits or a large size integrated circuit at the same time.
申请公布号 US6197603(B1) 申请公布日期 2001.03.06
申请号 US19980157153 申请日期 1998.09.18
申请人 HITACHI, LTD. 发明人 KOHNO RYUJI;KUMAZAWA TETSUO;KITANO MAKOTO;ARIGA AKIHIKO;WADA YUJI;BAN NAOTO;SHIBUYA SHUJI;MOTOYAMA YASUHIRO;MATSUMOTO KUNIO;KASUKABE SUSUMU;MORI TERUTAKA;SHIGI HIDETAKA;WATANABE TAKAYOSHI
分类号 G01R1/073;G01R3/00;H01L21/66;(IPC1-7):G01R31/26;H01L21/00;H01L21/44;H01L21/48;H01L21/50;H01L21/46;H01L21/78;H01L21/301 主分类号 G01R1/073
代理机构 代理人
主权项
地址