发明名称 |
Semiconductor device and manufacturing method thereof including a probe test step and a burn-in test step |
摘要 |
Dispersion of a load may be kept within a predetermined allowance even when a plurality of probes in a large area are pressed in batch by pressing the probes provided in a membrane against a wafer by applying a pressure load to a plurality of places on a plane of the pressure members on the side opposite the wafer in a probe test step, burn-in test step which represent typical semiconductor device manufacturing steps. It is then possible to provide semiconductor devices and a manufacturing method thereof which enhance the reliability and productivity of the semiconductor devices by probing a large number of integrated circuits or a large size integrated circuit at the same time.
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申请公布号 |
US6197603(B1) |
申请公布日期 |
2001.03.06 |
申请号 |
US19980157153 |
申请日期 |
1998.09.18 |
申请人 |
HITACHI, LTD. |
发明人 |
KOHNO RYUJI;KUMAZAWA TETSUO;KITANO MAKOTO;ARIGA AKIHIKO;WADA YUJI;BAN NAOTO;SHIBUYA SHUJI;MOTOYAMA YASUHIRO;MATSUMOTO KUNIO;KASUKABE SUSUMU;MORI TERUTAKA;SHIGI HIDETAKA;WATANABE TAKAYOSHI |
分类号 |
G01R1/073;G01R3/00;H01L21/66;(IPC1-7):G01R31/26;H01L21/00;H01L21/44;H01L21/48;H01L21/50;H01L21/46;H01L21/78;H01L21/301 |
主分类号 |
G01R1/073 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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