| 摘要 |
PROBLEM TO BE SOLVED: To reduce the dispersion of characteristics due to transistor elements or assembling and to reduce an adjustment time for permitting amplification gain and its frequency characteristics to be a desired value by providing a multi-transistor chip where a plurality of the transistor elements are formed in parallel on the same semi-conductor chip. SOLUTION: A amplifier circuit is constituted of the multi-transistor chip 2 where a plurality of transistor elements 1 are arranged in parallel on the same semi-conductor chip, a plurality of input matching circuits 3 corresponding to the transistor elements 1 and a plurality of output matching circuits 4. The transistor elements 1 which are continuously formed on a semi-conductor wafer are segmented as one chip to obtain the multi-transistor chip 2. The transistor elements 1 are mounted in a one-chip state which is formed on the chip 2. Then the transistor elements 1 and a matching circuit substrate are hardly misaligned in the case of assembling. |
