| 摘要 |
A semiconductor memory device includes a semiconductor substrate, a plurality of word lines, a plurality of decoders for selectively activating the plurality of word lines in accordance with an address, and a plurality of banks arranged in a predetermined direction. Each of the plurality of banks is connected to at least one of the plurality of word lines. At least two of the plurality of word lines are connected to one common decoder of the plurality of decoders. Each of at least two of the banks is connected to the at least two word lines of the plurality of word lines. The at least two banks are not adjacent.
|
