发明名称 |
Low temperature method to form low k dielectric |
摘要 |
Black diamond films, deposited using PECVD at low substrate temperatures, have been effectively stabilized by immersing them in de-ionized water at a temperature of about 90° C. for about 20 minutes or in a hydrogen peroxide solution (typically at a concentration of 10%) for about 60 minutes. Since it has been observed that the dielectric constant of the stabilized film increases with both immersion time and/or peroxide concentration, this effect may be used as a means for adjusting the dielectric constant of a black diamond film. Standard analytical techniques confirm that these low temperature stabilized films have electrical properties that are at least as good as those of films stabilized using high temperature heat treatments.
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申请公布号 |
US6197706(B1) |
申请公布日期 |
2001.03.06 |
申请号 |
US20000607042 |
申请日期 |
2000.06.30 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
LI LAIN-JANG;LIN CHENG-CHUNG;JANG SYUN-MING |
分类号 |
H01L21/314;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
H01L21/314 |
代理机构 |
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地址 |
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