| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method, which is capable of avoiding reduction in a ferroelectric material or a high dielectric material, even if a CMP(chemical mechanical polishing) process is employed in the manufacture of a semiconductor device, where a ferroelectric material or high dielectric material is used and applied to the manufacture of an FeRAM (nonvolatile semiconductor memory) and a DRAM (volatile semiconductor memory) or a system LSI, where the memory elements and logic elements are mounted mixedly. SOLUTION: A capacitor composed of an upper electrode 25, a dielectric film 24 of a ferroelectric material or high dielectric material, and a lower electrode 23 is provided. Furthermore, an interlayer insulating film 33 is formed above the capacitor, and the surface of the interlayer insulating film 33 is planarized through a CMP method. Then, the interlayer insulating film 33 is subjected to plasma annealing using N2O gas, through which moisture attached to the surface of the interlayer insulating film 33 and contained in the insulating film 33 are removed. Thereafter, a redeposition interlayer insulating film 34 is formed on the interlayer insulating film 33. |
