| 摘要 |
PROBLEM TO BE SOLVED: To provide a production method and a production device for accumulating a silica layer doped with a pure or proper dopant on a flat target. SOLUTION: This production device is provided with an inductively coupled plasma.torch 1 and a nozzle 9 for supplying a gas into the touch 1. The nozzle 9 is connected to a reagent source, and a reagent is supplied into the nozzle 9 in a gaseous state. The nozzle 9 is disposed so that the reagent can be supplied into the tail of a plasma generated from a gas having a pressure approximately equal to the atmospheric pressure in a free atmosphere generated in the plasma torch 1. A target 2 is configured so as to be allowed to pass above the touch 1 on the production of the silica layer. Therein, the height position of the target can arbitrarily be changed. |
