SYSTEM FOR ETCHING BOTH SIDES OF SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To attain high selectivity, little damages by ions, satisfactory etching rate (e.g. 200-1,000Åper min) and a satisfactory uniformity in a both-side simultaneous etching process. SOLUTION: Reactive seeds are generated and are made to flow to a substrate 224 for treatment. A diverter 228 is positioned between a generating chamber 202 and the substrate 224. A part of the reactive seeds flows through the diverter 228 for processing the front side of the substrate 224, other part of the reactive seeds is turned to the back side around the substrate 224 for treatment, and a flow restriction 230 is disposed between the substrate 224 and an exhaust system 206, thereby increasing the residence time of the reactive seeds adjacent to the back side.