| 摘要 |
PROBLEM TO BE SOLVED: To provide a light emitting thyristor whose outside light emitting efficiency is satisfactory. SOLUTION: A (p) type AlGaAs layer 12, an (n) type AlGaAs layer 14, a (p) type AlGaAs layer 16, and an (n) type AlGaAs layer 18 are successively laminated on a (p) type GaAs substrate, and an uppermost layer 30 made of materials selected from a group constituted of InGaP, InGaAsP, and AlGaInP is laminated on the (n) type AlGaAs layer 18 so that an ohmic contact with a cathode electrode 20 can b e realized. |
