| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a crystal of nitride of group III having a practical side for manufacturing a device such as a high-performance light emitting diode, LD, etc., and provide both a method and an apparatus for crystal growth, capable of growing the crystal of nitride of group III. SOLUTION: In this crystal growing apparatus for subjecting crystal of nitride of group III to crystal growth by using at least a flux (e.g. metal Na or a compound containing Na), a metal of group III (e.g. Ga (gallium)) and nitrogen or a nitrogen-containing compound, a region 102 for crystal growth of the crystal of nitride of group III (e.g. GaN crystal) is separated from regions 103 and 108 to which a metal of group III (e.g. gallium) and nitrogen (N) or a nitrogen (N)-containing compound are supplied in a reaction container whose temperature and pressure are controlled.</p> |
