发明名称 |
Ferroelectric thin film device and method of producing the same |
摘要 |
A ferroelectric thin film device comprises: a Si substrate; a TiN thin film epitaxially grown on the Si substrate in which Ti is partially substituted by Al; a metal thin film epitaxially grown on the TiN thin film; and a ferroelectric thin film grown and oriented on the metal thin film and composed of an oxide having a perovskite structure. The amount of Al substituted at Ti sites in the TiN thin film is about 1 to 30% in terms of Al atoms, and the oxygen content of the TiN thin film is about 5% or less in terms of oxygen atoms.
|
申请公布号 |
US6198120(B1) |
申请公布日期 |
2001.03.06 |
申请号 |
US19990249360 |
申请日期 |
1999.02.12 |
申请人 |
MURATA MANUFACTURING CO., LTD. |
发明人 |
SAKURAI ATSUSHI;LI XIAO-MIN;SHIRATSUYU KOSUKE |
分类号 |
H01G4/33;H01L21/02;H01L21/768;H01L21/822;H01L21/8242;H01L21/8246;H01L21/8247;H01L27/04;H01L27/10;H01L27/105;H01L27/108;H01L29/788;H01L29/792;H01L41/187;(IPC1-7):H01L29/72 |
主分类号 |
H01G4/33 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|