发明名称 Apparatus for wafer treatment for the manufacture of semiconductor devices
摘要 An apparatus is provided for wafer treatment during the manufacture of semiconductor devices. The apparatus for wafer treatment includes a shaft, a chuck supported by the shaft for holding a wafer to be treated, a solution nozzle for supplying a treatment solution for wafer treatment onto the wafer, a gas supplier for supplying a gas to the back side of the wafer, and a heater for heating the gas supplied to the back side of the wafer. The use of this apparatus improves the uniformity of a treatment process such as an etching process or a cleaning process by minimizing the temperature changes of the treatment solution supplied onto the wafer mounted on the spin chuck of the apparatus during the wafer treatment process.
申请公布号 US6197150(B1) 申请公布日期 2001.03.06
申请号 US19990320139 申请日期 1999.05.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KWAG GYU-HWAN;HWANG KYUNG-SEUK
分类号 H01L21/027;H01L21/00;H01L21/304;H01L21/306;H01L21/683;(IPC1-7):H01L21/00 主分类号 H01L21/027
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