发明名称 |
Apparatus for wafer treatment for the manufacture of semiconductor devices |
摘要 |
An apparatus is provided for wafer treatment during the manufacture of semiconductor devices. The apparatus for wafer treatment includes a shaft, a chuck supported by the shaft for holding a wafer to be treated, a solution nozzle for supplying a treatment solution for wafer treatment onto the wafer, a gas supplier for supplying a gas to the back side of the wafer, and a heater for heating the gas supplied to the back side of the wafer. The use of this apparatus improves the uniformity of a treatment process such as an etching process or a cleaning process by minimizing the temperature changes of the treatment solution supplied onto the wafer mounted on the spin chuck of the apparatus during the wafer treatment process.
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申请公布号 |
US6197150(B1) |
申请公布日期 |
2001.03.06 |
申请号 |
US19990320139 |
申请日期 |
1999.05.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KWAG GYU-HWAN;HWANG KYUNG-SEUK |
分类号 |
H01L21/027;H01L21/00;H01L21/304;H01L21/306;H01L21/683;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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