| 摘要 |
PROBLEM TO BE SOLVED: To connect the drain region of the source and drain regions of a first transistor and the gate electrode wiring material of a second transistor with each other at a low resistance. SOLUTION: A semiconductor device is constituted into a structure, where the device has a gate electrode formed on a semiconductor substrate 101 via an insulating film 103, sidewalls 106a are formed on the sidewalls of the gate electrode and source and drain regions 107 are formed in the substrate 101 separated from each other. In this case, a high-melting point metal film is formed over the entire surface, and after a heat treatment is performed on the metal film, a sidewall 106(b) formed on the sidewall of a gate electrode wiring material 104(b), which is formed on the drain region 107 of the source and drain regions of a first transistor, of a second transistor is masked with an insulating film 111 to perform an selective etching. The drain region 107 of the source and drain regions 107 of the first transistor and the material 104(b) of the second transistor can be connected with each other at a low resistance, by connecting the drain region 7 and the material 104(b) with each other through a high-melting point metallic compound film 110. |
