| 摘要 |
PROBLEM TO BE SOLVED: To prevent oxygen contained in an atmosphere of oxygen or in an insulating metal oxide, which forms a capacitor insulating film, from penetrating into a diffusion preventing film from its side. SOLUTION: A protective insulating film 14 is deposited on a field effect transistor provided on a semiconductor substrate 10, and a contact plug 15 whose lower end is connected to the impurity diffused layer 13 is formed in the protective insulating film 14. A diffusion preventing conductive film 16 connected to the upper end of the contact plug 15 is formed on the protective insulating film 14, and a capacitor lower electrode 17 is formed on the diffusion preventing film 16. At least, a sidewall 18 of oxidation inhibiting material is formed on the side of the diffusion preventing film 16, a capacitor insulating film 19 of an insulating metal oxide is formed on the capacitor lower electrode 17 and the sidewall 18, and a capacitor upper electrode 20 is formed on the capacitor insulating film 19.
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