| 摘要 |
PURPOSE: A method for manufacturing a capacitor is provided to eliminate a bridge problem between capacitors, by forming a SiON layer on an outer wall of a lower charge storage electrode. CONSTITUTION: After an interlayer dielectric(12) is formed on a semiconductor substrate(10) having various elements for forming a semiconductor device, the interlayer dielectric in a portion where a capacitor is to be formed is etched to form a contact hole. After the first polysilicon layer(13) for a plug is buried in the contact hole, a sacrificial oxide layer, an anti-reflecting coating(ARC) layer and a photoresist layer pattern are sequentially formed on the entire surface. An etching process is performed to expose the first polysilicon layer by using the photoresist layer pattern as a mask. The photoresist layer pattern is eliminated to form a pattern composed of the ARC layer and the sacrificial oxide layer. After a passivation layer is applied on the entire surface, an etching process is performed regarding the entire surface until the first polysilicon layer is exposed so that the ARC layer is removed and the passivation layer is left only on a side of the sacrificial oxide layer pattern. The second polysilicon layer(20) for a lower charge storage electrode is formed on the entire surface, and a photoresist layer is buried. After the photoresist layer is removed to expose the sacrificial oxide layer by a polishing process, the sacrificial oxide layer and the remaining photoresist layer are sequentially eliminated to complete the lower charge storage electrode.
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