PLASMA DEPOSITION EQUIPMENT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A plasma deposition equipment of a semiconductor device is provided to optimize a coverage of a deposition layer and to reduce an error rate, by installing a plurality of wafer stages in the plasma deposition equipment using an ion metal plasma(IMP) sputtering method. CONSTITUTION: Direct current(DC) power is supplied to a target supply unit(21) located in an upper portion of a chamber. Radio frequency(RF) power is supplied to an RF coil unit(22) located in a lower portion of the target supply unit. The RF coil unit transforms target ions supplied from the target supply unit into plasma. Alternate current(AC) power is supplied to a plurality of wafer stages(WS1-WS8) located in a lower portion of the RF coil unit. The wafer stages evaporate plasma ions generated from the RF coil unit on a wafer.