| 摘要 |
PURPOSE: A method for manufacturing a dual damascene structure is provided to prevent an edge of a contact hole from being damaged, by filling the contact hole with a photoresist layer, by forming an opening for forming an upper interconnection, and by eliminating the photoresist layer. CONSTITUTION: The second and third insulating layers(214,216) are sequentially formed on the first insulating layer(210) having a lower metal interconnection(212). The first photoresist layer pattern for forming a contact hole is formed on the third insulating layer. The third and second insulating layers are etched to expose the lower metal interconnection by using the first photoresist layer pattern as a mask, and the contact hole is formed. The first photoresist layer pattern is removed. The contact hole is filled with the second photoresist layer(224). The third photoresist layer pattern(226) for forming an upper interconnection is formed on the third insulating layer and the second photoresist layer. The third insulating layer and the second photoresist layer are etched to expose the second insulating layer by using the third photoresist layer pattern as a mask. The second and third photoresist layer are eliminated.
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