| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to form an electrode of a good shape and to easily perform a subsequent process, by preventing an interlayer dielectric from being etched in forming the electrode using a hard mask layer. CONSTITUTION: An interlayer dielectric(2) is formed on a semiconductor substrate(1), and an etch blocking layer(3) is formed on the interlayer dielectric. After portions of the etch blocking layer and the interlayer dielectric are sequentially etched to form a contact hole, a contact plug(4) is formed in the contact hole. After a Ti layer(5), a barrier metal layer(6) and a noble metal layer(7) are sequentially formed on the entire structure having the contact plug, a hard mask layer(8) is formed on the noble metal layer. A storage electrode composed of the Ti layer, the barrier metal layer and the noble metal layer and connected to the contact plug, is formed by an etching process using the hard mask layer as an etching mask layer. The hard mask layer is eliminated. A high dielectric layer(20) and a plate electrode(30) are formed on the entire structure having the storage electrode.
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