| 摘要 |
PURPOSE: A method for manufacturing a metal interconnection pattern of a semiconductor device is provided to improve an electric characteristic, by preventing an inner sidewall surface of the metal interconnection pattern from being damaged by a shortage of polymer. CONSTITUTION: An anti-reflecting coating(ARC) layer(20), a metal layer(30) and an anti-diffusing layer(40) are sequentially stacked on a lower structure(10) of a device. A lower hard mask as a low dielectric material is stacked on the resultant structure. After an upper hard mask is stacked on the lower hard mask, a photoresist layer is stacked to form a pattern. The upper hard mask is etched to form the first contact, and the remaining upper hard mask is eliminated. The lower hard mask is etched through the first contact to form the second contact(80). The ARC layer, the metal layer and the anti-diffusing layer are etched through the second contact to form a metal interconnection pattern having the third contact.
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